SEMiX603GAR066HDs
© by SEMIKRON Rev. 12 – 16.12.2009 1
SEMiX
®
3s
GAR
Trench IGBT Modules
SEMiX603GAR066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE（sat）
with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
V
CES
600 V
I
C
T
j
= 175 °C
T
c
=25°C
720 A
T
c
=80°C
541 A
I
Cnom
600 A
I
CRM
I
CRM
= 2xI
Cnom
1200 A
V
GES
-20 ... 20 V
t
psc
V
CC
= 360 V
V
GE
≤
15 V
V
CES
≤
600 V
T
j
= 150 °C
6μs
T
j
-40 ... 175 °C
Inverse diode
I
F
T
j
= 175 °C
T
c
=25°C
771 A
T
c
=80°C
562 A
I
Fnom
600 A
I
FRM
I
FRM
= 2xI
Fnom
1200 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
=25°C
1800 A
T
j
-40 ... 175 °C
Freewheeling diode
I
F
T
j
= 175 °C
T
c
=25°C
771 A
T
c
=80°C
562 A
I
Fnom
600 A
I
FRM
I
FRM
= 2xI
Fnom
1200 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
=25°C
1800 A
T
j
-40 ... 175 °C
Module
I
t（RMS）
600 A
T
stg
-40 ... 125 °C
V
isol
AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
V
CE（sat）
I
C
=600A
V
GE
=15V
chiplevel
T
j
=25°C
1.45 1.85 V
T
j
= 150 °C
1.7 2.1 V
V
CE0
T
j
=25°C
0.9 1 V
T
j
= 150 °C
0.85 0.9 V
r
CE
V
GE
=15V
T
j
=25°C
0.9 1.4 m
Ω
T
j
= 150 °C
1.4 2.0 m
Ω
V
GE（th）
V
GE
=V
CE
, I
C
=9.6mA 5 5.8 6.5 V
I
CES
V
GE
=0V
V
CE
=600V
T
j
=25°C
0.15 0.45 mA
T
j
= 150 °C
mA
C
ies
V
CE
=25V
V
GE
=0V
f=1MHz
37.0 nF
C
oes
f=1MHz
2.31 nF
C
res
f=1MHz
1.10 nF
Q
G
V
GE
=- 8 V...+ 15 V
4800 nC
R
Gint
T
j
=25°C
0.67
Ω
