1
1
MBI3600U4D-120
IGBT Modules
IGBT MODULE （
U
series）
1200V / 3600A / 1 in one package
Features
High speed switching
Voltage drive
Low
Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Suppl
y
Industrial machines, such as Welding machines
Maximum Ratings and
Characteristics
Absolute Maximum Ratings （at Tc=25
°C
unless otherwise specified）
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
V
CES
1200
V
Gate-Emitter voltage
V
GES
±20
V
Collector current
I
c
Continuous
Tc=
25
°C
4800
A
Tc=80
°C
36
00
I
c
pulse
1ms
Tc=
25
°C
96
00
Tc=80
°C
72
00
-I
c
36
00
-I
c
pulse
1ms
72
00
Collector power dissipation
P
c
1 device
18650
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +125
°C
Isolation voltage
Between terminal and copper base
（*1）
V
iso
AC : 1min.
2500
VAC
Screw torque
Mounting （*2）
5.75
N·m
Main Terminals
（*2）
10
Sense Terminals
（*2）
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m （M6）, Main Terminal : 8-10 N·m （M8）, Sense Terminal : 1.7-2.5 N·m （M4）
Electrical characteristics （at Tj= 25°C unless otherwise specified）
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Zero gate voltage collector current
I
CES
V
GE
=
0V
,
V
CE
=
120
0V
-
-
1
.0
mA
Gate-Emitter
leakage current
I
GES
V
C
E
=
0V
,
V
GE
=
±20V
-
-
48
00
n
A
Gate-Emitter threshold voltage
V
GE
（th）
V
CE
=
20V
,
I
C
=
36
00
mA
5.5
6.5
7
.5
V
Collector-Emitter
saturation voltage
V
CE
（sat）
（main terminal）
V
GE
=
15V
I
C
=
36
00
A
Tj=25°C
-
2.22
2.42
V
Tj=
125°C
-
2.42
-
V
CE
（sat）
（chip）
Tj=25°C
-
1.90
2.05
Tj=
125°C
-
2.10
-
Input capacitance
Cies
V
G
E
= 0V, V
C
E
= 10V, f = 1MHz
-
403
-
n
F
Turn-on time
ton
V
CC
=
6
00V
,
I
C
=
36
0
0
A
V
GE
=
±
15V, Tj = 125°C
R
g
on
=
0.6
?,
R
g
o
ff
=
0.
27
?
-
0.90
-
μ
s
tr
-
0.50
-
Turn-off time
toff
-
0.80
-
tf
-
0.20
-
Forward on voltage
V
F
（main terminal）
V
G
E
= 0V
I
F
=
36
00
A
Tj=25°C
-
1.97
2.17
V
Tj=
125°C
-
2.07
-
V
F
（chip）
Tj=25°C
-
1.65
1.80
Tj=
125°C
-
1.75
-
Reverse recovery time
trr
I
F
=
36
00
A
-
0.35
-
μ
s
L
ead resistance, terminal-chip
R lead
-
0.089
-
m?
Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Thermal resistance （1device）
Rth（j-c）
IGBT
-
-
0.0067
°C/W
FWD
-
-
0.011
Contact thermal resistance
（1device）
Rth（c-f）
with Thermal Compound
（*3）
-
0.006
-
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
1
MBI3600U4D-120
2
IGBT Modules
Characteristics （Representative）
VGE
=
0V, f
=
1MHz,
T
j
=
25
°
C
Tj
=
25
°
C
Tj
=
125
°
C, chip
Tj
=
25°C
,chip
C
o
ll
e
ct
o
r-E
m
itt
e
r vo
ltage
v
s. Gat
e
-E
m
itt
e
r vo
ltage
（t
y
p.）
T
j
=
25°C
,chip
VGE
=
+
15V,chip
C
o
ll
e
ct
o
r-E
m
itt
e
r vo
ltage
v
s. Gat
e
-E
m
itt
e
r vo
ltage
（t
y
p.）
C
o
ll
e
ct
o
r cu
r
r
e
nt
v
s. C
o
ll
e
ct
o
r-E
m
itt
e
r vo
ltage
（t
y
p.）
Capacitance vs. Collector-Emitter voltage （typ.）
Dynamic Gate charge （typ.）
0
1000
2000
3000
4000
5000
6000
7000
8000
0.
0
1.
0
2.
0
3.
0
4.
0
5.0
Collector current : Ic [A]
Collector current : Ic [A]
C
oll
ec
t
o
r
-
E
m
itt
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
VG
E=20V
15V
12V
10V
8V
0
1000
2000
3000
4000
5000
6000
7000
8000
0.
0
1.
0
2.
0
3.
0
4.
0
5.0
Collector current : Ic [A]
C
oll
ec
t
o
r
-
E
m
itt
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
VG
E=20V
15V
12V
10V
8V
0
1000
2000
3000
4000
5000
6000
7000
8000
0.
0
1.
0
2.
0
3.
0
4.0
C
oll
ec
t
o
r
-
E
m
itt
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
T
j
=125
°
C
T
j
=25
°
C
0
2
4
6
8
10
5
1
0
1
5
2
0
25
Collector - Emitter voltage : VCE [ V ]
G
a
t
e
-
E
m
itt
e
r
v
o
l
t
a
g
e
:
VG
E
[
V
]
I
c
=7200A
I
c
=3600A
I
c
=1800A
1
10
100
1000
0
1
0
2
0
30
Capacitance : Cies, Coes, Cres [ nF ]
C
oll
ec
t
o
r
-
E
m
itt
e
r
v
o
l
t
a
g
e
:
V
C
E
[
V
]
C
i
e
s
C
o
e
s
C
r
e
s
0
200
400
600
800
1000
0
300
0
600
0
900
0
1200
0
1500
0
18000
G
a
t
e
c
h
a
r
g
e
:
Q
g
[
n
C
]
0
5
10
15
20
25
VGE
VCE
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]