宽带RF放大器

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宽带RF放大器100kHz到12GHz 24dBm输出

The MTC5515 is a precision GaAs medium power amplifier. It operates from 30 KHz to 11 GHz and exhibits a flat linear gain response. The MTC5515 has low internal jitter making it useful for digital applications. The self-contained module operates from a +8V and a -5V power supply. It is fully hermetic, consumes 5 W of power and operates over a case temperature range from 0 degree C to +70 degree C. With an input voltage of 0.8V p-p, the typical output is 7.5 VP-P. Low jitter and large amplitude output makes the MTC5515 an attractive component for driving LiNb03 in applications where a high extinction ratio is required. For convenience, the output voltage can be varied from 5V to 7.5 VPP by adjusting the voltage on the +V pin. By applying a DC voltage to the BIAS pin, an offset voltage can be added to the output signal via a 1K Ohm internal resistance.

 Features:

• 23 dB typical gain

• Output voltage up to 8VP-P

• Flat gain over 11GHz bandwidth, +/- 0.75 dB p-p typical

• 30 KHz to 11 GHz bandwidth （or 12.5Gb/s）

Technical Specifications

Model Number MTC5515-751

Data Rate Up to 12.2Gb/s

Frequency Response 30kHz to 11GHz

Output Amplitude 8.0Vp-p typical, 8.5Vp-p maximum

Output Power 24dBm minimum

RF Gain Up to 23dB, variable

Gain Ripple +/- 0.75dB peak to peak

Gain Control Range 6dB typical

Group Delay NA

Noise Figure NA

RF Impedance 50 Ohm

Input Range 400mV to 1000mV

Input VSWR 1.6:1, 200kHz to 10GHz

Output VSWR 2.0:1 typical, 3.0:1 maximum

Rise Time 38ps maximum

Output Coupling AC Coupled

Environment / User Interface

RF Connectors SMA Female In, SMA Male Out

Electrical Connectors 7-pin

Power Requirement 8.0VDC @ 550mA, -5.0VDC @ 110mA

Dimensions 2.35

Soldering Temperature 215˚C maximum for 30 seconds

Operating Temperature Range 0˚C to +70˚C

Storage Temperature Range -25˚C to +100˚C

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