HoneywellGPT系列传感器

HoneywellGPT系列传感器

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2021-07-21 16:05:16
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北京休恩博得科技股份有限公司

北京休恩博得科技股份有限公司

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产品简介

Characteristic特性Parameter参数Supplyvoltage12Vdcto32VdcOvervoltageandreversevoltage36VdcNominaloutputt

详细介绍

Characteristic 特性

Parameter 参数

Supply voltage

12 Vdc to 32Vdc

Over voltage and reverse voltage

±36 Vdc

Nominal output transfer function

0 Vdc to 10 Vdc or 4 mA to 20 mA

Operating temperature range

-25 to 85

Storage temperature range

-40 to 125

Compensated temperature range

0 to 70

Accuracy 1)

±0.5%FS

Total Error Band 2) 总误差带

±2%FS over 0 to 70

Response time 反应时间

<2 mS (10% to 90% step change in pressure

Turn on time 3) 开启时间

<7 mS

EMC rating 电磁兼容性

Electro Magnetic Compatibility

electrostatic discharge 静电放电

±4 kV contact, ±8 kV air per IEC 61000-4-2

radiated immunity 辐射抗扰度

10 V/m (80 MHz to 1000 MHz) per IEC 61000-4-3

fast transient burst 快速瞬变脉冲群

±1 kV per IEC 61000-4-4

Surge Immunity 浪涌抗扰度

±1 kV per IEC 61000-4-5

immunity to conducted disturbances

3 V per IEC 61000-4-6

radiated emissions 辐射排放


40 dB (30 MHz to 230 MHz), 47 dB (230 MHz to 1000 MHz) per CISPR 11:2009, A1:2010

radiated immunity 辐射抗扰度

100 V/m per ISO 11452-2

Insulation resistance 绝缘电阻

>100 MOhm, 500 Vdc

Dielectric strength 介电强度

AC750V, 1 min.

Load resistance 负载电阻

Voltage output: 2kOhm min; Current Output: (Vs-8)*50 ohm max

Life

5 million cycles minimum to 90% full scale pressure

MPa

Bar

Rated Pressure

Over pressure

Burst pressure

Rated Pressure

Over pressure

Burst pressure

25

50

75

250

500

750


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